1. Technical OverviewSingle-crystal diamond substrate wafers feature grain-boundary-free structure, ultra-low defect density, superior thermal conductivity uniformity, excellent optical homogeneity, and reliable insulation stability. Owing to these comprehensive advantages, they have become core substrate materials for

1. Technical OverviewFeaturing superior comprehensive physical and chemical properties, diamond substrate wafers have emerged as core high-end substrate materials for third‑ and fourth‑generation semiconductor high-power devices, high-frequency RF devices, quantum optical systems, and precision sensing platforms. Com

With the continuous upgrading of high-power continuous-wave lasers, pulsed lasers, and high-energy laser systems toward ultra-high flux, long service life and high precision, the core performance requirements for optical substrates have evolved from basic light transmittance to comprehensive capabilities including ther

Featuring an ultra-broad spectral transmission window covering the full band from deep ultraviolet (DUV), visible light, and near-infrared (NIR) to mid-infrared (MIR), fused silica substrates are one of the most adaptable core substrate materials for optical spectroscopy, laser transmission, and optoelectronic detectio

In high‑end optical fields including precision lithography, laser interferometric metrology, astronomical observation and high‑resolution imaging, fused silica substrates serve as indispensable core foundational materials. The imaging accuracy, beam parallelism and wavefront integrity of an entire optical system ulti

IntroductionHigh-quality, low-defect SiC substrates serve as the foundation for manufacturing high-performance power devices, yet they are not the final determining factor of device quality. Unlike mature silicon-based semiconductor processes, silicon carbide features extremely stable chemical bonds, bringing unique te

IntroductionSilicon carbide (SiC) substrates are among the most challenging single-crystal materials to manufacture in the semiconductor industry. Featuring complex growth procedures, long production cycles and strict defect control requirements, SiC substrates represent a core technical barrier in the global SiC indus

IntroductionThe widespread adoption of new energy vehicles, grid integration of renewable energy, and comprehensive upgrading of advanced industrial intelligent manufacturing have driven the power semiconductor industry to transition from the silicon era to the wide band gap era. As a core wide band gap material, silic

Previous single-factor experiments have clarified the independent influence mechanisms of three process gases (Ar, CF₄, and O₂) on SiC plasma machining performance. However, actual mass production of SiC substrates involves strong coupling effects among five critical parameters, including gas flow rates, RF machining

In the atmospheric‑pressure plasma machining system for silicon carbide (SiC), process gases serve as the core medium for plasma generation, active particle excitation, and chemical reaction progression. Argon (Ar), carbon tetrafluoride (CF₄), and oxygen (O₂) perform independent yet coupled functions. Their flow rat